Offering the promise of silicon photonics, ART could open the door to faster speeds than today’s technology allows.
 
     
    Strained silicon performance enhancements increase processing speed and reduce power consumption.
 
 

AmberWave, Purdue target III-V materials

March 24, 2006 - AmberWave Systems Corp., Salem, NH, a developer of IP relating to strained silicon and other advanced materials, and Purdue U. have agreed to jointly develop technologies for integrating semiconductor devices on III-V materials.

"We have been working on III-V material technology for some time and this collaboration with Purdue will significantly enhance that development," stated Richard Faubert, AmberWave president and CEO.

Purdue's principal researcher for the joint work is Peide "Peter" Ye, an expert in III-V MOSFET technology and atomic-layer deposition. He was previously a researcher at Bell Labs and Agere Systems. The main contribution from AmberWave will be expertise in deposition and defectivity in mixed-material systems, as well as a business development process toward commercialization, he stated.

About AmberWave Systems
Founded in 1998, AmberWave Systems has become a leader in the research, development and licensing of advanced technologies for semiconductor manufacturing. By funding and guiding university research, AmberWave Systems is bringing new technology developments to fruition through patents and technology licensing. In conjunction with its university research projects, AmberWave Systems conducts its own research, development and limited manufacturing in its semiconductor fabrication facility in Salem, New Hampshire. In addition, AmberWave Systems collaborates with other technology focused companies to further expand and develop its research. For more information about the company, please visit its Web site at www.amberwave.com.