ISTDM attracts individuals, companies and academia from across the globe, and provides a forum for presentations and discussions on device-related topics, ranging from SiGe and other group-IV materials, such as SiGe:C and SiGeSn, as well as process technologies for a variety of devices and circuits.
Dr. Ji-Soo Park was invited to speak at ISTDM, and will provide an overview of AmberWave Systems’ technology, specifically Aspect Ratio Trapping (ART), and its promising approach to germanium and III-Vs heteroepitaxy on silicon. His presentation is entitled, “Aspect Ratio Trapping, a new Approach to Heteroepitaxy of Ge and III-Vs on Si.”
Dr. James G. Fiorenza, research director for AmberWave Systems, will present, “Stress Simulation of a Germanium Reverse Embedded-SiGe PMOSFET,” which analyzes a uniaxial compressive strain technique for germanium channel PMOSFETs. |
