AmberWave Systems to present at the 2008 IEEE International Electron Devices Meeting

AmberWave Systems has been accepted to present at the 2008 IEEE International Electron Devices Meeting, to be held December 15-17 at the Hilton San Francisco, in San Francisco, Calif. The presentation time will take place at 9 a.m. on Wednesday, December 17 in the Continental Ballroom 5. AmberWave Systems will be presenting the paper, "Record PVCR GaAs-based Tunnel Diodes Fabricated on Si Substrates Using Aspect Ratio Trapping," which will also be published in the 2008 Technical Digest.

The paper is the result of a joint collaboration between researchers at AmberWave Systems, the Rochester Institute of Technology and Notre Dame University.